74AUP1G57GN集成电路（IC）的门反相器-多功能可配置规格书PDF中文资料

厂商型号	74AUP1G57GN
参数属性	74AUP1G57GN 封装/外壳为6-XFDFN；包装为卷带（TR）；类别为集成电路（IC）的门反相器-多功能可配置；产品描述：IC GATE CONFIG MULTI-FUNC 6XSON
功能描述	Low-power configurable multiple function gate
丝印标识	aC
封装外壳	SOT1115 / 6-XFDFN
文件大小	294.43 Kbytes
页面数量	20 页
生产厂商	NEXPERIA Nexperia B.V. All rights reserved
中文名称	安世安世半导体(中国)有限公司
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-7 23:00:00
人工找货	74AUP1G57GN价格和库存，欢迎联系客服免费人工找货

1. General description

The 74AUP1G57 is a configurable multiple function gate with Schmitt-trigger inputs. The device

can be configured as any of the following logic functions AND, OR, NAND, NOR, XNOR, inverter

and buffer; using the 3-bit input. All inputs can be connected directly to VCC or GND. This device

ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to

3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry

disables the output, preventing the potentially damaging backflow current through the device when

it is powered down.

2. Features and benefits

• Wide supply voltage range from 0.8 V to 3.6 V

• CMOS low power dissipation

• High noise immunity

• Overvoltage tolerant inputs to 3.6 V

• Low noise overshoot and undershoot < 10 of VCC

• IOFF circuitry provides partial power-down mode operation

• Latch-up performance exceeds 100 mA per JESD 78 Class II

• Low static power consumption; ICC = 0.9 μA (maximum)

• Complies with JEDEC standards:

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• ESD protection:

• HBM JESD22-A114F exceeds 5000 V

• MM JESD22-A115-A exceeds 200 V

• CDM JESD22-C101E exceeds 1000 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C