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74AUP1G38GF中文资料74AUP1G38GF - Low-power 2-input NAND-gate (open drain)数据手册Nexperia规格书

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厂商型号

74AUP1G38GF

参数属性

74AUP1G38GF 封装/外壳为6-XFDFN;包装为卷带(TR);类别为集成电路(IC)的门反相器;产品描述:IC GATE NAND OD 1CH 2-INP 6XSON

功能描述

74AUP1G38GF - Low-power 2-input NAND-gate (open drain)

封装外壳

6-XFDFN

制造商

Nexperia Nexperia B.V. All rights reserved

中文名称

安世 安世半导体(中国)有限公司

数据手册

下载地址下载地址二

更新时间

2025-9-24 12:00:00

人工找货

74AUP1G38GF价格和库存,欢迎联系客服免费人工找货

74AUP1G38GF规格书详情

描述 Description

Low-power 2-input NAND-gate (open drain) - The 74AUP1G38 provides the single 2-input NAND gate with open-drain output. The output of the device is an open drain and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions. Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial Power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.

特性 Features

·Wide supply voltage range from 0.8 V to 3.6 V
·High noise immunity
·Complies with JEDEC standards: ·JESD8-12 (0.8 V to 1.3 V)
·JESD8-11 (0.9 V to 1.65 V)
·JESD8-7 (1.2 V to 1.95 V)
·JESD8-5 (1.8 V to 2.7 V)
·JESD8-B (2.7 V to 3.6 V)

技术参数

  • 制造商编号

    :74AUP1G38GF

  • 生产厂家

    :Nexperia

  • Product status

    :Production

  • V_CC (V)

    :1.1 - 3.6

  • Logic switching levels

    :CMOS

  • Output drive capability (mA)

    :1.9

  • t_pd (ns)

    :8.5

  • f_max (MHz)

    :70

  • No of bits

    :1

  • Power dissipation considerations

    :ultra low

  • T_amb (Cel)

    :-40~125

  • R_th(j-a) (K/W)

    :311

  • Ψ_th(j-top) (K/W)

    :7.7

  • R_th(j-c) (K/W)

    :157

  • Package name

    :XSON6

供应商 型号 品牌 批号 封装 库存 备注 价格
恩XP
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全新原装正品现货,支持订货
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恩XP
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只做原装正品现货或订货假一赔十!
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