74AUP1G14GX集成电路（IC）的门反相器规格书PDF中文资料

厂商型号	74AUP1G14GX
参数属性	74AUP1G14GX 封装/外壳为4-XFDFN；包装为管件；类别为集成电路（IC）的门反相器；产品描述：74AUP1G14-Q100 - LOW-POWER SCHMI
功能描述	Low-power Schmitt trigger inverter
丝印标识	PF
封装外壳	SOT1226-3 / 4-XFDFN
文件大小	311.72 Kbytes
页面数量	21 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-24 22:59:00
人工找货	74AUP1G14GX价格和库存，欢迎联系客服免费人工找货

1. General description

The 74AUP1G14 is a single inverter with Schmitt-trigger input. This device ensures very low static

and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is

fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output,

preventing the potentially damaging backflow current through the device when it is powered down.

2. Features and benefits

• Wide supply voltage range from 0.8 V to 3.6 V

• CMOS low power dissipation

• High noise immunity

• Overvoltage tolerant inputs to 3.6 V

• Low static power consumption; ICC = 0.9 μA (maximum)

• Latch-up performance exceeds 100 mA per JESD 78 Class II

• Low noise overshoot and undershoot < 10 of VCC

• IOFF circuitry provides partial Power-down mode operation

• Complies with JEDEC standards:

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 Class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 Class C3 exceeds 1000 V

• MM: JESD22-A115-A exceeds 200 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C

3. Applications

• Wave and pulse shaper

• Astable multivibrator

• Monostable multivibrator