74AUP1G08GS集成电路（IC）的门反相器规格书PDF中文资料

厂商型号	74AUP1G08GS
参数属性	74AUP1G08GS 封装/外壳为6-XFDFN；包装为卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带；类别为集成电路（IC）的门反相器；产品描述：IC GATE AND 1CH 2-INP 6XSON
功能描述	Low-power 2-input AND gate
丝印标识	PE
封装外壳	XSON6 / 6-XFDFN
文件大小	273.54 Kbytes
页面数量	18 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-5 11:16:00
人工找货	74AUP1G08GS价格和库存，欢迎联系客服免费人工找货

1. General description

The 74AUP1G08 is a single 2-input AND gate. Schmitt-trigger action at all inputs makes the circuit

tolerant of slower input rise and fall times. This device ensures very low static and dynamic power

consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for

partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the

potentially damaging backflow current through the device when it is powered down.

2. Features and benefits

• Wide supply voltage range from 0.8 V to 3.6 V

• CMOS low power dissipation

• High noise immunity

• Overvoltage tolerant inputs to 3.6 V

• Low noise overshoot and undershoot < 10 of VCC

• IOFF circuitry provides partial Power-down mode operation

• Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

• Low static power consumption; ICC = 0.9 μA (maximum)

• Complies with JEDEC standards:

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• ESD protection:

• HBM JESD22-A114F Class 3A exceeds 5000 V

• MM JESD22-A115-A exceeds 200 V

• CDM JESD22-C101E exceeds 1000 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C