Inverter with open-drain output

DESCRIPTION The 74AHC1G/AHCT1G06 is a high-speed Si-gate CMOS device. The 74AHC1G/AHCT1G06 provides the inverting buffer. FEATURES • High noise immunity • ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V • Low power dissipation • SOT353 packa

文件：66.37 Kbytes 页数：16 Pages

PHI

PHI

Inverter with open-drain output

Nexperia

安世

Inverter with open-drain output

General description 74AHC1G06 and 74AHCT1G06 are high-speed Si-gate CMOS devices. They provide an inverting buffer. The output of these devices is an open-drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH, wired-AND functions. For digital oper

文件：78.89 Kbytes 页数：11 Pages

恩XP

Inverter with open-drain output

General description 74AHC1G06 and 74AHCT1G06 are high-speed Si-gate CMOS devices. They provide an inverting buffer. The output of these devices is an open-drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH, wired-AND functions. For digital oper

文件：78.89 Kbytes 页数：11 Pages

恩XP

Inverter with open-drain output

General description 74AHC1G06 and 74AHCT1G06 are high-speed Si-gate CMOS devices. They provide an inverting buffer. The output of these devices is an open-drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH, wired-AND functions. For digital oper

文件：78.89 Kbytes 页数：11 Pages

恩XP

Inverter with open-drain output

DESCRIPTION The 74AHC1G/AHCT1G06 is a high-speed Si-gate CMOS device. The 74AHC1G/AHCT1G06 provides the inverting buffer. FEATURES • High noise immunity • ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V • Low power dissipation • SOT353 packa

文件：66.37 Kbytes 页数：16 Pages

PHI

PHI