74ACT11373DBR集成电路（IC）的锁存器规格书PDF中文资料

74ACT11373DBR属于集成电路（IC）的锁存器。由德州仪器制造生产的74ACT11373DBR锁存器锁存器是类似于触发器的基本数字存储设备，但是不同之处在于，在锁存使能（或类似命名）信号处于有效逻辑状态的任何时间，保持的逻辑状态都可以改变。“透明”锁存器还允许设备输出在锁存使能信号有效时反映输入的当前状态，而相反的是，状态仅在保持状态已固定时改变。

Eight Latches in a Single Package

3-State Bus Driving True Outputs

Full Parallel Access for Loading

Buffered Input and Output-Enable Pins

Inputs Are TTL-Voltage Compatible

Flow-Through Architecture Optimizes

PCB Layout

Center-Pin VCC and GND Configurations

Minimize High-Speed Switching Noise

EPIC (Enhanced-Performance Implanted

CMOS) 1-
m Process

500-mA Typical Latch-Up Immunity at

125°C

Package Options Include Plastic

Small-Outline (DW) and Shrink

Small-Outline (DB) Packages, and Standard

Plastic 300-mil DIPs (NT)

description

This 8-bit latch features 3-state outputs designed specifically for driving highly-capacitive or relatively

low-impedance loads. It is particularly suitable for implementing buffer registers, I/O ports, bidirectional bus

drivers, and working registers.

The eight latches of the 74ACT11373 are transparent D-type latches. While the latch-enable (LE) input is high,

the Q outputs follow the data (D) inputs. When the enable is taken low, the Q outputs are latched at the levels

that were set up at the D inputs.

A buffered output-enable (OE) input can be used to place the eight outputs in either a normal logic state (high

or low logic levels) or a high-impedance state. In the high-impedance state, the outputs neither load nor drive

the bus lines significantly. The high-impendance third state and increased drive provide the capability to drive

the bus lines in a bus-organized system without need for interface or pullup components.

OE does not affect the internal operations of the latches. Old data can be retained or new data can be entered

while the outputs are off.

The 74ACT11373 is characterized for operation from –40°C to 85°C.