FAST CMOS 20-BIT BUFFER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 5V ±10%

文件：235.96 Kbytes 页数：8 Pages

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瑞萨

FAST CMOS 20-BIT BUFFER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 5V ±10%

文件：235.96 Kbytes 页数：8 Pages

RENESAS

瑞萨

FAST CMOS 20-BIT BUFFER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 5V ±10%

文件：235.96 Kbytes 页数：8 Pages

RENESAS

瑞萨

FAST CMOS 20-BIT BUFFER

FEATURES: • 0.5 MICRON CMOS Technology • High-speed, low-power CMOS replacement for ABT functions • Typical tSK(o) (Output Skew) 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • VCC = 5V ±10%

文件：235.96 Kbytes 页数：8 Pages

RENESAS

瑞萨