72413L25PG8中文资料瑞萨数据手册PDF规格书

FEATURES:

• First-ln/First-Out Dual-Port memory—45MHz

• 64 x 5 organization

• Low-power consumption

— Active: 200mW (typical)

• RAM-based internal structure allows for fast fall-through time

• Asynchronous and simultaneous read and write

• Expandable by bit width

• Cascadable by word depth

• Half-Full and Almost-Full/Empty status flags

• High-speed data communications applications

• Bidirectional and rate buffer applications

• High-performance CMOS technology

• Available in plastic DIP and SOIC

• Green parts available, see ordering information