Features:

◆ 128K x 36 Synchronous Bank-Switchable Dual-ported

SRAM Architecture

– 64 independent 2K x 36 banks

– 4 megabits of memory on chip

◆ Bank access controlled via bank address pins

◆ High-speed data access

– Commercial: 3.4ns (200MHz)/3.6ns (166MHz)/

4.2ns (133MHz) (max.)

◆ Selectable Pipelined or Flow-Through output mode

◆ Counter enable and repeat features

◆ Dual chip enables allow for depth expansion without

additional logic

◆ Supports JTAG features compliant with IEEE 1149.1

◆ Full synchronous operation on both ports

– 5ns cycle time, 200MHz operation (14Gbps bandwidth)

– Fast 3.4ns clock to data out

– 1.5ns setup to clock and 0.5ns hold on all control, data, and

address inputs @ 200MHz

– Data input, address, byte enable and control registers

– Self-timed write allows fast cycle time

◆ Separate byte controls for multiplexed bus and bus

matching compatibility

◆ LVTTL- compatible, 3.3V (±150mV) power supply

for core

◆ LVTTL compatible, selectable 3.3V (±150mV) or 2.5V (±100mV)

power supply for I/Os and control signals on each port

◆ Available in a 208-pin fine pitch Ball Grid Array (fpBGA), and

256-pin Ball Grid Array (BGA)

70V7599S166BC8属于集成电路（IC） > 存储器。瑞萨科技有限公司制造生产的70V7599S166BC8存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。