Features:

◆ True Dual-Port memory cells which allow simultaneous

access of the same memory location

◆ High-speed data access

– Commercial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)

– Industrial: 4.2ns (133MHz) (max.)

◆ Selectable Pipelined or Flow-Through output mode

◆ Counter enable and repeat features

◆ Dual chip enables allow for depth expansion without

additional logic

◆ Full synchronous operation on both ports

– 6ns cycle time, 166MHz operation (12Gbps bandwidth)

– Fast 3.6ns clock to data out

– 1.7ns setup to clock and 0.5ns hold on all control, data, and

address inputs @ 166MHz

– Data input, address, byte enable and control registers

– Self-timed write allows fast cycle time

70V3599S166BFG属于集成电路（IC） > 存储器。瑞萨科技有限公司制造生产的70V3599S166BFG存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。