Features:

◆ True Dual-Port memory cells which allow simultaneous

access of the same memory location

◆ High-speed clock to data access

– Commercial: 4.2/5/6ns (max.)

– Industrial: 5ns (max)

◆ Pipelined output mode

◆ Counter enable and reset features

◆ Dual chip enables allow for depth expansion without

additional logic

◆ Full synchronous operation on both ports

– 7.5ns cycle time, 133MHz operation (9.6 Gbps bandwidth)

– Fast 4.2ns clock to data out

– 1.8ns setup to clock and 0.7ns hold on all control, data, and

address inputs @ 133MHz

– Data input, address, byte enable and control registers

– Self-timed write allows fast cycle time

◆ Separate byte controls for multiplexed bus and bus

matching compatibility

◆ LVTTL- compatible, single 3.3V (±150mV) power supply for

core

◆ LVTTL compatible, selectable 3.3V (±150mV)/2.5V (±125mV)

power supply for I/Os and control signals on each port

◆ Industrial temperature range (-40°C to +85°C) is

available for selected speeds

◆ Available in a 208-pin Plastic Quad Flatpack (PQFP) and

208-pin fine pitch Ball Grid Array, and 256-pin Ball Grid

Array

◆ Green parts available, see ordering information

70V3579S6BF属于集成电路（IC） > 存储器。瑞萨科技有限公司制造生产的70V3579S6BF存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。