Features

◆ True Dual-Ported memory cells which allow simultaneous

access of the same memory location

◆ High-speed access

– Commercial: 25/35ns (max.)

– Industrial: 25ns (max.)

◆ Low-power operation

– IDT70V261S

Active: 300mW (typ.)

Standby: 3.3mW (typ.)

– IDT70V261L

Active: 300mW (typ.)

Standby: 660μW (typ.)

◆ Separate upper-byte and lower-byte control for multiplexed

bus compatibility

◆ IDT70V261 easily expands data bus width to 32 bits or more

using the Master/Slave select when cascading more than

one device

◆ M/S = VIH for BUSY output flag on Master

M/S = VIL for BUSY input on Slave

◆ Interrupt Flag

◆ On-chip port arbitration logic

◆ Full on-chip hardware support of semaphore signaling

between ports

◆ Fully asynchronous operation from either port

◆ TTL-compatible, single 3.3V (±0.3V) power supply

◆ Available in a 100-pin TQFP, Thin Quad Plastic Flatpack

◆ Industrial temperature range (-40°C to +85°C) is available

for selected speed

70V261S属于集成电路（IC） > 存储器。瑞萨科技有限公司制造生产的70V261S存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。