首页 >70P256A55AGA>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
70P256A55AGA | VERY LOW POWER 1.8V 8K/4K x 16 DUAL-PORT STATIC RAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IDT |
16+ |
原厂封装 |
2000 |
原装现货假一罚十 |
询价 | ||
23+ |
N/A |
48800 |
正品授权货源可靠 |
询价 | |||
IDT |
0443+ |
BGA |
248 |
百分百进口原装库存-价惠货真 |
询价 | ||
IDT |
BGA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
IDT |
04+ |
BGA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
IDT |
22+ |
BGA100 |
10000 |
原装正品优势现货供应 |
询价 | ||
IDT |
22+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
IDT |
BGA100 |
6000 |
原装现货,长期供应,终端可账期 |
询价 | |||
IDT |
22+ |
BGA |
18000 |
原装现货原盒原包.假一罚十 |
询价 | ||
IDT, Integrated Device Technol |
21+ |
168-VFBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
询价 |
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