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70P256A55AGA

VERY LOW POWER 1.8V 8K/4K x 16 DUAL-PORT STATIC RAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70P256A55AAA

VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70P256A55AAI

VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70P256A55AGI

VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70P256A55BYAA

VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70P256A55BYAI

VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70P256A55BYGA

VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

70P256A55BYGI

VERYLOWPOWER1.8V8K/4Kx16DUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous readsofthesamememorylocation ◆High-speedaccess –Industrial:55ns(max.) ◆Low-poweroperation IDT70P256/246L Active:27mW(typ.) Standby:3.6μW(typ.) ◆Separateupper-byteandlower-bytecontrolformultiplexed bu

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

供应商型号品牌批号封装库存备注价格
IDT
16+
原厂封装
2000
原装现货假一罚十
询价
23+
N/A
48800
正品授权货源可靠
询价
IDT
0443+
BGA
248
百分百进口原装库存-价惠货真
询价
IDT
BGA
8560
一级代理 原装正品假一罚十价格优势长期供货
询价
IDT
04+
BGA
880000
明嘉莱只做原装正品现货
询价
IDT
22+
BGA100
10000
原装正品优势现货供应
询价
IDT
22+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
IDT
BGA100
6000
原装现货,长期供应,终端可账期
询价
IDT
22+
BGA
18000
原装现货原盒原包.假一罚十
询价
IDT, Integrated Device Technol
21+
168-VFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
更多70P256A55AGA供应商 更新时间2024-4-28 8:00:00