丝印：7026；Package：SIP-3L；Single Output Hall Effect Latch

GENERAL DESCRIPTION MA7026 is an integrated Hall effect latched sensor designed for electronic commutation of brush-less DC motor applications. The device is using HV BCD process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and

文件：116.46 Kbytes 页数：2 Pages

MPOWERMajor-Power Technology Co., LTD.

久昌科技久昌科技股份有限公司

HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM WITH INTERRUPT

Features ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 15/55ns (max.) – Industrial 20ns (max.) ◆ Low-power operation – IDT70261S Active: 750mW (typ.) Standby: 5mW (typ.) – IDT70261L Active: 750mW (typ.) Sta

文件：509.51 Kbytes 页数：21 Pages

RENESAS

瑞萨

HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM WITH INTERRUPT

Features ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 15/55ns (max.) – Industrial 20ns (max.) ◆ Low-power operation – IDT70261S Active: 750mW (typ.) Standby: 5mW (typ.) – IDT70261L Active: 750mW (typ.) Sta

文件：509.51 Kbytes 页数：21 Pages

RENESAS

瑞萨

HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM WITH INTERRUPT

Features ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 15/55ns (max.) – Industrial 20ns (max.) ◆ Low-power operation – IDT70261S Active: 750mW (typ.) Standby: 5mW (typ.) – IDT70261L Active: 750mW (typ.) Sta

文件：509.51 Kbytes 页数：21 Pages

RENESAS

瑞萨

HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM WITH INTERRUPT

Features ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 15/55ns (max.) – Industrial 20ns (max.) ◆ Low-power operation – IDT70261S Active: 750mW (typ.) Standby: 5mW (typ.) – IDT70261L Active: 750mW (typ.) Sta

文件：509.51 Kbytes 页数：21 Pages

RENESAS

瑞萨

HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM WITH INTERRUPT

Features ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 15/55ns (max.) – Industrial 20ns (max.) ◆ Low-power operation – IDT70261S Active: 750mW (typ.) Standby: 5mW (typ.) – IDT70261L Active: 750mW (typ.) Sta

文件：509.51 Kbytes 页数：21 Pages

RENESAS

瑞萨

HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM WITH INTERRUPT

Features ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 15/55ns (max.) – Industrial 20ns (max.) ◆ Low-power operation – IDT70261S Active: 750mW (typ.) Standby: 5mW (typ.) – IDT70261L Active: 750mW (typ.) Sta

文件：509.51 Kbytes 页数：21 Pages

RENESAS

瑞萨

18 (19/30) AWG Tinned Copper

文件：406.82 Kbytes 页数：4 Pages

ALPHAWIREAlpha Wire

阿尔法电线

HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM WITH INTERRUPT

文件：703.57 Kbytes 页数：20 Pages

IDT

HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM

文件：203.33 Kbytes 页数：20 Pages

IDT