4X16E43V中文资料PDF规格书
4X16E43V规格书详情
[MEMPHIS]
GENERAL DESCRIPTION
The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in 4,096 rows by 1,024 columns on the MEM4X16E43VTW. During READ or WRITE cycles, each location is uniquely addressed via the address bits: 12 row-address bits (A0-A11) and 10 column-address bits (A0-A9) on the MEM4X16E43VTW version. In addition, the byte and word accesses are supported via the two CAS# pins (CASL# and CASH#).
FEATURES
• Single +3.3V ±0.3V power supply
• Industry-standard x16 pinout, timing, functions, and package
• 12 row, 10 column addresses (4)
13 row, 9 column addresses (8)
• High-performance CMOS silicon-gate process
• All inputs, outputs and clocks are LVTTL-compatible
• Extended Data-Out (EDO) PAGE MODE access
• 4,096-cycle CAS#-BEFORE-RAS# (CBR) REFRESH distributed across 64ms
• Self refresh for low-power data retention
产品属性
- 型号:
4X16E43V
- 功能描述:
4 MEG x 16 EDO DRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STARRAM |
23+ |
NA/ |
906 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
RAMSUSA |
23+ |
SSOP |
9980 |
价格优势、原装现货、客户至上。欢迎广大客户来电查询 |
询价 | ||
B&F |
22+ |
NA |
1800 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
ETRONTEC |
23+ |
TSOP |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
ATARRAM |
2048+ |
TSOP54 |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
N/A |
23+ |
TSSOP86 |
6500 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
EtronTech |
TSOP54 |
608900 |
原包原标签100%进口原装常备现货! |
询价 | |||
STARRAM |
2023+ |
TSOP86 |
6895 |
原厂全新正品旗舰店优势现货 |
询价 | ||
STARRAM |
22+ |
TSOP86 |
40256 |
本公司只做原装进口现货 |
询价 | ||
4X2901B |
4 |
4 |
询价 |