isc N-Channel MOSFET Transistor

文件：284.18 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：4N60AS；Package：TO-263；4A 600V N-channel enhanced field effect transistor

文件：1.06546 Mbytes 页数：7 Pages

YFWDIODE

佑风微

丝印：4N60AS；Package：TO-263；4A 600V N-channel enhanced field effect transistor

文件：1.06546 Mbytes 页数：7 Pages

YFWDIODE

佑风微

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

文件：124.46 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

文件：120.94 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

文件：146.13 Kbytes 页数：6 Pages

ONSEMI

安森美半导体