N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

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UTC

友顺

TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM

T MOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to with

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MOTOROLA

摩托罗拉

PowerMOS transistors Avalanche energy rated

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PHI

PHI

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHX4N40E is supplied

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PHI

PHI