4N35-G中文资料CTMICRO数据手册PDF规格书

描述 Description

The 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38, H11A1, H11A2, H11A3, H11A4, H11A5 series consists of a photo transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 6-lead DIP package different lead forming options.

特性 Features

• High isolation 5000 VRMS

• CTR flexibility available see order information

• DC input with transistor output

• Operating temperature range - 55 °C to 110 °C

• Regulatory Approvals

■ UL - UL1577 (E364000)

■ VDE - EN60747-5-5(VDE0884-5)

■ CQC – GB4943.1, GB8898

■ IEC60065, IEC60950

Applications

• Switch mode power supplies

• Computer peripheral interface

• Microprocessor system interface