4N29MT1-G中文资料CTMICRO数据手册PDF规格书

描述 Description

The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option.

特性 Features

• High isolation 5000 VRMS

• CTR flexibility available see order information

• DC input with transistor output

• Temperature range - 55 °C to 100 °C

• Regulatory Approvals

■ UL - UL1577 (E364000)

■ VDE - EN60747-5-5(VDE0884-5)

■ CQC – GB4943.1, GB8898

■ IEC60065, IEC60950

Applications

• Switch mode power supplies

• Computer peripheral interface

• Microprocessor system interface