Silicon P-Channel Power MOS FET Array

Features • Low on-resistance RDS(on) 0.13 , VGS = –10 V, ID = –4 A RDS(on) 0.17 , VGS = –4 V, I D = –4 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver and solenoid driver and

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Silicon P-Channel Power MOS FET Array

Features\n• Low on-resistance RDS(on) 0.13 , VGS = –10 V, ID = –4 A\n                          RDS(on) 0.17 , VGS = –4 V, I D = –4 A\n• Capable of 4 V gate drive\n• Low drive current\n• High speed switching\n• High density mounting\n• Suitable for motor driver and solenoid driver and lamp driverAppl

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