P-Channel Enhancement Mode Power MOSFET

Description The 4805 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features VDS = -30V,ID = - 8.0A RDS(ON)typ 17mΩ @ VGS= -10V

文件：4.3887 Mbytes 页数：6 Pages

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丝印：4805；Package：SOP-8；Dual P-Channel MOSFET

■ Features ● VDS (V) = -30V ● ID = -9 A (VGS = -20V) ● RDS(ON)

文件：1.16957 Mbytes 页数：4 Pages

KEXIN

科信电子

丝印：4805；Package：SOP-8；Dual P-Channel MOSFET

■ Features ● VDS (V) = -30V ● ID = -9 A (VGS = -20V) ● RDS(ON)

文件：1.80663 Mbytes 页数：4 Pages

KEXIN

科信电子

丝印：4805；Package：SOP-8；Dual P-Channel MOSFET

■ Features ● VDS (V) = -30V ● ID = -9 A (VGS = -20V) ● RDS(ON)

文件：1.16957 Mbytes 页数：4 Pages

KEXIN

科信电子