4803B中文资料拓锋半导体数据手册PDF规格书

描述 Description

The 4803B uses advanced trench technology to provide

excellent RDS(ON) and low gate charge . The complementary

MOSFETs may be used to form a level shifted high side

switch, and for a host of other applications.

General Features

VDS = -30V,ID = - 5.0A

RDS(ON) < 50mΩ @ VGS= -10V

RDS(ON) < 60mΩ @ VGS= -4.5V

● High power and current handing capability

● Lead free product is acquired

● Surface mount package