丝印：48；Package：DFN2020P3E；Transient Voltage Suppressing Device For ESD/Transient/Surge Protection

Features
ESD protection for one line with uni-directional
Provide transient protection for one line to IEC 61000-4-2 (ESD) ±30kV (air/contact) IEC 61000-4-4 (EFT) 80A (5/50ns) IEC 61000-4-5 (Lightning) 138A (8/20ms)
Suitable for, 18V and below, operating voltage applications
2.0mm

文件：210.58 Kbytes 页数：7 Pages

AMAZING

晶焱科技

丝印：48；Package：SOT346；NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

文件：420.53 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：48；Package：SOT323；NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

文件：420.53 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：48；Package：SC-70；50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1. General description NPN Resistor-Equipped Transistor (RET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123EU 2. Features and benefits • Built-in bias resistors • Simplifies circuit design • Reduces component count • Reduces pick and plac

文件：183.96 Kbytes 页数：7 Pages

NEXPERIA

安世

丝印：48；Package：SOT666；50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ and R1 = 2.2 kΩ, R2 = 47 kΩ

1. General description NPN/PNP double Resistor-Equipped Transistor (RET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces compone

文件：242.06 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：48；Package：SOT666；NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k and R1 = 2.2 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：1.3095 Mbytes 页数：17 Pages

NEXPERIA

安世

丝印：48；Package：SC-88；NPN/PNP resistor-equipped transistors; R1 = 47 k, R2 = 47 k and R1 = 2.2 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

文件：1.3095 Mbytes 页数：17 Pages

NEXPERIA

安世

丝印：48；Package：TSSOP6；NPN/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ and R1 = 2.2 kΩ, R2 = 47 kΩ

1. General description NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces component coun

文件：253.63 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：48；24V ESD and EOS Protection for 2-Line Automotive Applications

Description μClamp®series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD and surge. They feature large cross-sectional area junctions for conducting high transient currents. They offer desirable characteristics for board level protection includ

文件：829.92 Kbytes 页数：10 Pages

SEMTECH

先之科

丝印：48；24V ESD and EOS Protection for 2-Line Automotive Applications

Description μClamp®series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD and surge. They feature large cross-sectional area junctions for conducting high transient currents. They offer desirable characteristics for board level protection includ

文件：829.92 Kbytes 页数：10 Pages

SEMTECH

先之科