P-Channel 30-V (D-S) MOSFET

文件：1.8467 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：4435A；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES @ Vos =-30Vio=-9A @ Ros(on = 20m@Ves=10V @ Ros(on = 35mO@Ves=4.5V

文件：2.88112 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：4435A；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES | @ Vos=-30Vjo= 9A | © Rosczmogesmioy | ® Ros(Ov=35mO@Ves=4.5V |

文件：2.886 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

P-Channel Enhancement Mode Power MOSFET

Description The 4435B uses advanced trench technology to provide excellent RDS , low gate charge and operation with gate voltages as low as 4.5V. General Features ● VDS = -30V RDS

文件：3.42716 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m廓

General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers

文件：288.78 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：69.93 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子