3.0SMC440

Marking：440；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

3.0SMC440A

Marking：440A；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

3.0SMC440C

Marking：440C；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

3.0SMC440CA

Marking：440CA；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

4435

Marking：4435；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description The4435usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

ABAS40-04-HF

Marking：44.；Package：SOT-23；Small Signal Schottky Diodes

Features -EpoxymeetsUL-94V-0flammabilityrating. -MoisturesensitivityLevel1. -AEC-Q101Qualified. -Lowforwardvoltageschottkyrectifier.

AO4402

Marking：4402；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Application +PWMApplications «LoadSwitch

AO4407

Marking：4407；Package：SO-8；P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO4407usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andultra-lowlowgatechargewitha25Vgaterating.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO4407isPb-free(meetsROHS&Sony259specifications)

AO4407

Marking：4407A；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

GENERALFEATURES Vos=-30VID=-60A RDS(ON)

AO4409

Marking：4409；Package：SOP-8；P-Channel Enhancement Mode MOSFET

FEATURES -30V/-15A Rosion)=6-8MQ(Max.)@Vg=-10V Roson=13MQ(Max)@V,,=-4.5V