CEM4308

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■40V,5.8A,RDS(ON)=38mΩ@VGS=10V. RDS(ON)=50mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CHM4308JPT

DualN-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE40VoltsCURRENT5.8Ampere FEATURE *Smallflatpackage.(SO-8) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CTTC4308F

RFIDTransponderCoils

DMF4308

SiliconBeam-LeadandChipSchottkyBarrierMixerDiodes

EC4308C

P-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

EL4308

StandardEuro-StackingConductiveContainers

ERB4308

PlasticfastRecoverRectifier

ERB4308

PlasticfastRecoverRectifierReverseVoltage200to800VForwardCurrent0.5A

Features •Lowreverseleakage •Highforwardsurgecapability •Hightemperaturesolderingguaranteed:260℃/10seconds,0.375(9.5mm)leadlength.5lbs.(2.3kg)tension •LeadandbodyaccordingwithRoHSstandard MechanicalData •Terminals:Platedaxialleads •Polarity:Colorbanddeno

F4308

HCMOS,7.5x5mm,2.85VSMDOscillator

FJN4308R

PNPEpitaxialSiliconTransistor

SwitchingApplication(BiasResistorBuiltIn) •Switchingcircuit,Inverter,Interfacecircuit,DriverCircuit •BuiltinbiasResistor(R1=47KΩ,R2=22KΩ) •ComplementtoFJN3308R