512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S32200 is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DESCR

文件：982.93 Kbytes 页数：55 Pages

ISSI

矽成半导体

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

ISSI

矽成半导体

512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The ICSI IC42S32200 and IC42S32200L is a high-speed CMOS configured as a quad 512K x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal,CLK). Each of the 512K x 32 bit banks is organized as 2048 rows by 256 columns by 32 bits.Rea

文件：900.01 Kbytes 页数：62 Pages

ICST

512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The ICSI IC42S32200 and IC42S32200L is a high-speed CMOS configured as a quad 512K x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal,CLK). Each of the 512K x 32 bit banks is organized as 2048 rows by 256 columns by 32 bits.Rea

文件：900.01 Kbytes 页数：62 Pages

ICST

512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S32200 is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. GENERAL DESCR

文件：982.93 Kbytes 页数：55 Pages

ISSI

矽成半导体