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41LV16100B-60T

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

41LV16100B-60TI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

41LV16100B-60TL

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

41LV16100B-60TLI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

IS41LV16100B-60K

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

IS41LV16100B-60KI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

IS41LV16100B-60KL

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

IS41LV16100B-60KLI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

IS41LV16100B-60T

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

IS41LV16100B-60TI

1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE

DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半导体有限公司

详细参数

  • 型号:

    41LV16100B-60T

  • 制造商:

    ISSI

  • 制造商全称:

    Integrated Silicon Solution, Inc

  • 功能描述:

    1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

供应商型号品牌批号封装库存备注价格
ICSI
23+
2800
正品原装货价格低
询价
ICSI
23+
TSOP
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
SI
24+
NA/
205
优势代理渠道,原装正品,可全系列订货开增值税票
询价
ISS
24+
108
询价
IBM
21+
BGA
18
原装现货假一赔十
询价
NORTEL
12+PBF
CBGA
2997
原装现货
询价
ERICSSON
2023+
BGA
50000
原装现货
询价
CR
13+
DIP-4
1792
原装分销
询价
CR原装
25+23+
DIP-4
31968
绝对原装正品全新进口深圳现货
询价
CR
24+
DIP-4
880000
明嘉莱只做原装正品现货
询价
更多41LV16100B-60T供应商 更新时间2025-5-10 10:30:00