首页 >41LV16100B-60T>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
41LV16100B-60T | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半导体有限公司 | ISSI | |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半导体有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半导体有限公司 | ISSI | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半导体有限公司 | ISSI | ||
1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半导体有限公司 | ISSI | ||
1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半导体有限公司 | ISSI | ||
1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半导体有限公司 | ISSI | ||
1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半导体有限公司 | ISSI | ||
1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半导体有限公司 | ISSI | ||
1Mx16(16-MBIT)DYNAMICRAMWITHEDOPAGEMODE DESCRIPTION TheISSIIS41LV16100Bis1,048,576x16-bithigh-performanceCMOSDynamicRandomAccessMemories.ThesedevicesofferanacceleratedcycleaccesscalledEDOPageMode.EDOPageModeallows1,024randomaccesseswithinasinglerowwithaccesscycletimeasshortas20nsper16-bitword | ISSIIntegrated Silicon Solution Inc 北京矽成北京矽成半导体有限公司 | ISSI |
详细参数
- 型号:
41LV16100B-60T
- 制造商:
ISSI
- 制造商全称:
Integrated Silicon Solution, Inc
- 功能描述:
1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ICSI |
23+ |
2800 |
正品原装货价格低 |
询价 | |||
ICSI |
23+ |
TSOP |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
SI |
24+ |
NA/ |
205 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ISS |
24+ |
108 |
询价 | ||||
IBM |
21+ |
BGA |
18 |
原装现货假一赔十 |
询价 | ||
NORTEL |
12+PBF |
CBGA |
2997 |
原装现货 |
询价 | ||
ERICSSON |
2023+ |
BGA |
50000 |
原装现货 |
询价 | ||
CR |
13+ |
DIP-4 |
1792 |
原装分销 |
询价 | ||
CR原装 |
25+23+ |
DIP-4 |
31968 |
绝对原装正品全新进口深圳现货 |
询价 | ||
CR |
24+ |
DIP-4 |
880000 |
明嘉莱只做原装正品现货 |
询价 |
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