3N80C中文资料仙童半导体数据手册PDF规格书

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features

• 3.0A, 800V, RDS(on) = 4.8Ω @VGS = 10 V

• Low gate charge ( typical 13 nC)

• Low Crss ( typical 5.5 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability