Time-lag Fuse Series

文件：478.6 Kbytes 页数：2 Pages

BEL

Time-lag Fuse Series

文件：478.6 Kbytes 页数：2 Pages

BEL

Time-lag Fuse Series

文件：478.6 Kbytes 页数：2 Pages

BEL

Time-lag Fuse Series

文件：478.6 Kbytes 页数：2 Pages

BEL

SILICON DIFFUSED TYPE (HIGH SPEED RECTIFIER APPLICATIONS)

文件：161.38 Kbytes 页数：3 Pages

TOSHIBA

东芝

包装：盒 类别：开关 配件 - 帽盖 描述：CAP TRANSLUCIENT WHITE

E-SWITCH

丝印：3J-；Package：SOT-143B；PNP general purpose double transistor

DESCRIPTION PNP double transistor in a SOT143B plastic package. NPN complement: BCV61. FEATURES • Low current (max. 100 mA) • Low voltage (max. 30 V) • Matched pair. APPLICATIONS • For use in applications where the working point must be independent of temperature • Current mirrors.

文件：51.16 Kbytes 页数：8 Pages

PHI

PHI

丝印：3J0；Package：DFN4C；TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

Features Ultra small package DFN4C/DFN4F (1.0 mm x 1.0 mm; t 0.38 mm (Typ.)). High Ripple rejection ratio 100 dB (Typ.) @1 kHz (VOUT = 2.8 V) High Ripple rejection ratio 93 dB (Typ.) @10 kHz (VOUT = 2.8 V) High Ripple rejection ratio 68 dB (Typ.) @100 kHz (VOUT = 2.8 V) High Ripple rejection

文件：1.78112 Mbytes 页数：20 Pages

TOSHIBA

东芝

丝印：3J1；Package：DFN4C；TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

Features Ultra small package DFN4C/DFN4F (1.0 mm x 1.0 mm; t 0.38 mm (Typ.)). High Ripple rejection ratio 100 dB (Typ.) @1 kHz (VOUT = 2.8 V) High Ripple rejection ratio 93 dB (Typ.) @10 kHz (VOUT = 2.8 V) High Ripple rejection ratio 68 dB (Typ.) @100 kHz (VOUT = 2.8 V) High Ripple rejection

文件：1.78112 Mbytes 页数：20 Pages

TOSHIBA

东芝

丝印：3J2；Package：DFN4C；TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

Features Ultra small package DFN4C/DFN4F (1.0 mm x 1.0 mm; t 0.38 mm (Typ.)). High Ripple rejection ratio 100 dB (Typ.) @1 kHz (VOUT = 2.8 V) High Ripple rejection ratio 93 dB (Typ.) @10 kHz (VOUT = 2.8 V) High Ripple rejection ratio 68 dB (Typ.) @100 kHz (VOUT = 2.8 V) High Ripple rejection

文件：1.78112 Mbytes 页数：20 Pages

TOSHIBA

东芝