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10SMBT10A

丝印:3A10;Package:DO-214AA;6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件:3.40045 Mbytes 页数:5 Pages

UNSEMI

优恩半导体

10SMBT11A

丝印:3A11;Package:DO-214AA;6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件:3.40045 Mbytes 页数:5 Pages

UNSEMI

优恩半导体

10SMBT12A

丝印:3A12;Package:DO-214AA;6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件:3.40045 Mbytes 页数:5 Pages

UNSEMI

优恩半导体

10SMBT13A

丝印:3A13;Package:DO-214AA;6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件:3.40045 Mbytes 页数:5 Pages

UNSEMI

优恩半导体

10SMBT14A

丝印:3A14;Package:DO-214AA;6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件:3.40045 Mbytes 页数:5 Pages

UNSEMI

优恩半导体

10SMBT15A

丝印:3A15;Package:DO-214AA;6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件:3.40045 Mbytes 页数:5 Pages

UNSEMI

优恩半导体

10SMBT16A

丝印:3A16;Package:DO-214AA;6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件:3.40045 Mbytes 页数:5 Pages

UNSEMI

优恩半导体

10SMBT17A

丝印:3A17;Package:DO-214AA;6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件:3.40045 Mbytes 页数:5 Pages

UNSEMI

优恩半导体

10SMBT18A

丝印:3A18;Package:DO-214AA;6.5 To 75V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip . 1000 W peak pulse power capability with a 10/1000 us waveform . Repetitive rate (duty cycle):0.01 . Very Fast response time: typically less than 1.0ps from 0V to VBR min Excellent clamping capability . For surface mounted applications in order to optimize bo

文件:3.40045 Mbytes 页数:5 Pages

UNSEMI

优恩半导体

INA241A5QDGKRQ1

丝印:3A1B;Package:VSSOP;INA241x-Q1 AEC-Q100, –5 V to 110 V, Bidirectional, Ultra-Precise Current Sense Amplifier With Enhanced PWM Rejection

1 Features • AEC-Q100 qualified for automotive applications: – Temperature grade 1: −40°C to +125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • Enhanced PWM rejection optimized for systems subject to switching common-mode voltages – Su

文件:2.85396 Mbytes 页数:39 Pages

TI

德州仪器

技术参数

  • PD(W):

    3

  • VZ_Min@IZT(V):

    6.46

  • VZ_Typ@IZT(V):

    6.8

  • VZ_Max@IZT(V):

    7.14

  • IZT(mA):

    110

  • ZZT@IZT(Ω):

    2

  • ZZK@IZK(Ω):

    700

  • IZK(mA):

    1

  • IR@VR(μA):

    10

  • IR@VR(V):

    4

  • Izm(mA):

    393

  • VF@IF=200mA(V):

    1.5

  • RθJA(℃/W):

    100

  • Tj(℃):

    -55~+150

  • PPAP:

    Y

  • Status:

    Active

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更多3A1供应商 更新时间2026-3-11 11:06:00