丝印：38V*；Package：SOT-23；Low IQ, Low Dropout 300mA Fixed Voltage Regulator

General Description The APL5308/9 series are micropower, low dropout lin ear regulators, which operate from 2.7V to 6V input voltage and del i ver up to 300mA. Typical dropout voltage is only 400mV at 300mA l oadi ng. Desi gned for use in battery-powered system, the low 60mA qui

文件：157.71 Kbytes 页数：13 Pages

ANPEC

茂达电子

丝印：38V*；Package：SOT-25；Low IQ, Low Dropout 300mA Fixed Voltage Regulator

General Description The APL5308/9 series are micropower, low dropout lin ear regulators, which operate from 2.7V to 6V input voltage and del i ver up to 300mA. Typical dropout voltage is only 400mV at 300mA l oadi ng. Desi gned for use in battery-powered system, the low 60mA qui

文件：157.71 Kbytes 页数：13 Pages

ANPEC

茂达电子

丝印：38VH；Package：SOT-23；SN74AHCT1G04 Single Inverter Gate

1 Features • Operating range 4.5V to 5.5V • Max tpd of 7.5ns at 5V • Low power consumption, 10μA max ICC • ±8mA output drive at 5V • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250mA per JESD 17 2 Applications • Notebook PCs • Electronic Points of Sale • Patient M

文件：1.07332 Mbytes 页数：24 Pages

TI

德州仪器

丝印：38VH；Package：SOT-23；SN74AHCT1G04 Single Inverter Gate

1 Features • Operating range 4.5V to 5.5V • Max tpd of 7.5ns at 5V • Low power consumption, 10μA max ICC • ±8mA output drive at 5V • Inputs are TTL-voltage compatible • Latch-up performance exceeds 250mA per JESD 17 2 Applications • Notebook PCs • Electronic Points of Sale • Patient M

文件：1.07332 Mbytes 页数：24 Pages

TI

德州仪器

丝印：38V*；Package：SOT-23；Low IQ, Low Dropout 300mA Fixed Voltage Regulator

文件：267.31 Kbytes 页数：15 Pages

ANPEC

茂达电子

丝印：38V*；Package：SOT-25；Low IQ, Low Dropout 300mA Fixed Voltage Regulator

文件：267.31 Kbytes 页数：15 Pages

ANPEC

茂达电子

64 Mbit (x16) Advanced Multi-Purpose Flash Plus

Description The SST38VF6401B, SST38VF6402B, SST38VF6403B, and SST38VF6404B devices are 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+) manufactured with Microchip proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling inje

文件：1.127 Mbytes 页数：56 Pages

MICROCHIP

微芯科技

64 Mbit (x16) Advanced Multi-Purpose Flash Plus

Description The SST38VF6401B, SST38VF6402B, SST38VF6403B, and SST38VF6404B devices are 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+) manufactured with Microchip proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling inje

文件：1.127 Mbytes 页数：56 Pages

MICROCHIP

微芯科技

64 Mbit (x16) Advanced Multi-Purpose Flash Plus

Description The SST38VF6401B, SST38VF6402B, SST38VF6403B, and SST38VF6404B devices are 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+) manufactured with Microchip proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling inje

文件：1.127 Mbytes 页数：56 Pages

MICROCHIP

微芯科技

64 Mbit (x16) Advanced Multi-Purpose Flash Plus

Description The SST38VF6401B, SST38VF6402B, SST38VF6403B, and SST38VF6404B devices are 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+) manufactured with Microchip proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling inje

文件：1.127 Mbytes 页数：56 Pages

MICROCHIP

微芯科技