RAST-5-Steckverbinder, Raster 5,0 mm

RAST 5 connectors, pitch 5.0 mm

文件：106.61 Kbytes 页数：2 Pages

LUMBERG

隆堡

Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 – 3600 MHz

Description The GTRA362802FC is a 280-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on

文件：553.14 Kbytes 页数：8 Pages

WOLFSPEED

Thermally-Enhanced High Power RF GaN on SiC HEMT 280 W, 48 V, 3400 ??3600 MHz

文件：282.47 Kbytes 页数：5 Pages

Cree

科锐

LANDP/芯茂微
SOP7

LANDP/芯茂微

上传：深圳市粤华信科技有限公司

TE

TE

上传：深圳市恒佳微电子有限公司