34AA02T-E/MS集成电路（IC）的存储器规格书PDF中文资料

34AA02T-E/MS属于集成电路（IC）的存储器。由微芯科技股份有限公司制造生产的34AA02T-E/MS存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Description

The Microchip Technology Inc. 34XX02(1) is a 2-Kbit

Electrically Erasable PROM (EEPROM). This device

has two software write-protect features for the lower

half of the array, as well as an external pin that can be

used to write-protect the entire array. This allows the

system designer to protect none, half or all of the array,

depending on the application. The device is organized

as one block of 256 x 8-bit memory with a two-wire

serial interface. Its low-voltage design permits

operation down to 1.7V, with standby and active

currents of only 100 nA and 1 mA, respectively. The

34XX02 also has a page write capability for up to 16 bytes of data.

Features

• Permanent and Resettable Software Write-Protect

for Lower Half of the Array (00h-7Fh)

• Single Supply with Operation Down to 1.7V

• Low-Power CMOS Technology:

- Read current: 1 mA, typical

- Standby current: 100 nA, typical

• Two-Wire Serial Interface Bus, I2C Compatible

• Cascadable Up to Eight Devices

• Schmitt Trigger Inputs for Noise Suppression

• Output Slope Control to Eliminate Ground Bounce

• 100 kHz and 400 kHz Compatibility

• 1 MHz Clock for LC Versions

• Page Write Time: 5 ms, Maximum

• Self-Timed Erase/Write Cycle

• 16-Byte Page Write Buffer

• ESD Protection > 4,000V

• Software Write Protection for Lower 128 Bytes

• Hardware Write Protection for Entire Array

• More than 1 Million Erase/Write Cycles

• Data Retention > 200 Years

• RoHS Compliant

• Available for Extended Temperature Ranges:

- Industrial (I): -40°C to +85°C

- Extended (E): -40°C to +125°C

• Automotive AEC-Q100 Qualified