丝印：3416；Package：ST23-3；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low On-Resistance ● ESD protected ● High Power and Current Handing Capability ● Lead-Free,RoHS Compliant

文件：354.64 Kbytes 页数：4 Pages

ADV

爱德微

丝印：3416；Package：SOT-23；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features ESD≥2500HBM Application Lithium battery protection Wireless impact Mobile phone fast charging

文件：1.54106 Mbytes 页数：5 Pages

YFWDIODE

佑风微

丝印：3416；Package：YFW3416MI；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features ESD=2500HBM Application Battery protection Load switch Uninterruptible power supply

文件：1.00569 Mbytes 页数：5 Pages

YFWDIODE

佑风微

丝印：3416；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

文件：2.69484 Mbytes 页数：7 Pages

FOSTER

福斯特半导体

丝印：3416；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

文件：877.74 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

丝印：3416；Package：SOT-23；LCE N-Channel Enhancement Mode Power MOSFET

文件：986.7 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：3416；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

文件：1.17008 Mbytes 页数：6 Pages

LEIDITECH

雷卯电子

丝印：3416；Package：SOT-23；N- Enhancement Mode Field Effect Transistor

文件：2.64182 Mbytes 页数：7 Pages

PJSEMI

平晶半导体

丝印：3416；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

文件：174.48 Kbytes 页数：7 Pages

RECTRON

丽正国际

PLASTI-GRIP Terminals & Splices

Key Features and Benefits • Vinyl insulation sleeve provides good dielectric strength and supports the wire insulation so that no bare wire is exposed • Most product is UL and CSA approved • Most product rated to 105 degrees C, with an operating voltage of 600 V • Insulation is 94V-0 rated •

文件：2.49255 Mbytes 页数：6 Pages

TEC

泰科电子