3109T

3109T Multi-Conductor - EIA Industrial RS-485 PLTC/CMG

3109T-A-1032-AL

包装：散装 类别：五金件，紧固件，配件 板垫片，支座 描述：ROUND SWAGE STANDOFFPLAIN ALUMIN

3109T-A-1032-B

包装：散装 类别：五金件，紧固件，配件 板垫片，支座 描述：ROUND SWAGE STANDOFFPLAIN BRASS3

3109T-A-1032-S

包装：散装 类别：五金件，紧固件，配件 板垫片，支座 描述：ROUND SWAGE STANDOFFPLAIN STEEL3

3109

3/8SquareDriveSockets,SAE

3109

WASHERSANDNUTS

[KEYSTONE] FIBRESHOULDERWASHERS HEXMACHINENUTS NYLONSHOULDERWASHER/BUSHINGS BLINDCAPTIVENUTS-PRESSFIT METRICMACHINENUTS

3109

113MHzBandpassFilter

3109A

RS485,4Pr#22StrTC,POIns,OSTCBrd,PVCJkt,CM

3109DB

RS-485ULDIRBUR,4Pr,22AWG,Str,TC,POIns,OSTCBrd,CPEJkt,CM,PLTC,Outdoor,SunRes,OilRes

3109Z

3109ZMulti-Conductor-EIAIndustrialRS-485PLTC/CMG

AMS3109

CurrentLimitprotection

AMS3109

Micropower700mALowNoiseFastTransientResponseLDO

AMS3109S

CurrentLimitprotection

AN3109

UsingtheMulti-Axisg-SelectEvaluationBoards

BX3109

RFAMPLIFIERMODEL

BYF3109

CEM3109

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES 30V,10A,RDS(ON)=14mW@VGS=10V. RDS(ON)=20mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant. -30V,-8A,RDS(ON)=20mW@VGS=-10V. RDS(ON)=30mW@VGS

CEM3109

DualEnhancementModeFieldEffectTransistor

FEATURES ■30V,10A,RDS(ON)=14mΩ@VGS=10V. RDS(ON)=20mΩ@VGS=4.5V. ■-30V,-8A,RDS(ON)=20mΩ@VGS=-10V. RDS(ON)=30mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■

CEU3109

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES 30V,22A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-252-4Lpackage. RDS(ON)=20mW@VGS=4.5V. Lead-freeplating;RoHScompliant. -30V,-18A,RDS(ON)=20mW@VGS=10V. RDS(ON)=30mW@VGS

CM3109

2ASink/SourceRegulatorforFrontSideBusandDDRMemoryBusTermination

ProductDescription TheCM3109isasinkingandsourcingregulatorspecificallydesignedforseries-parallelbusterminationforhighspeedchipsetbusesaswellasDDRmemorysystems.Itcansourceandsinkcurrentupto2Awithhighaccuracyof0.5.TheVTToutputvoltageisselectablebyVDD