丝印：3100；Package：DO-214AA；SMD Schottky Barrier Diode

Features - AEC-Q101 Qualified. - High surge current capability. - Low reverse current. - High current capability.

文件：481.22 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：310019；WE-PoE Power over Ethernet Transformer

General Information: Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：546.05 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：310020；WE-PoE Power over Ethernet Transformer

General Information: Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：545.84 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：3100R17；Package：VQFN-FCRLF；LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver

1 Features • Integrated 1.7mΩ (LMG3100R017) or 4.4 mΩ (LMG3100R044) GaN FET and driver • 100V continuous, 120V pulsed voltage rating • Interated high-side level shift and bootstrap • Two LMG3100 can form a half-bridge – No external level shifter needed • 5V external bias power supply • Sup

文件：1.63277 Mbytes 页数：36 Pages

TI

德州仪器

丝印：3100R4；Package：VQFN-FCRLF；LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver

1 Features • Integrated 1.7mΩ (LMG3100R017) or 4.4 mΩ (LMG3100R044) GaN FET and driver • 100V continuous, 120V pulsed voltage rating • Interated high-side level shift and bootstrap • Two LMG3100 can form a half-bridge – No external level shifter needed • 5V external bias power supply • Sup

文件：1.15872 Mbytes 页数：30 Pages

TI

德州仪器

丝印：3100R4；Package：VQFN-FCRLF；LMG3100R017 (126A), LMG3100R044 (46A) 100V GaN FET With Integrated Driver

1 Features • Integrated 1.7mΩ (LMG3100R017) or 4.4 mΩ (LMG3100R044) GaN FET and driver • 100V continuous, 120V pulsed voltage rating • Interated high-side level shift and bootstrap • Two LMG3100 can form a half-bridge – No external level shifter needed • 5V external bias power supply • Sup

文件：1.63277 Mbytes 页数：36 Pages

TI

德州仪器

丝印：3100L10；Package：TESOP-8；Dual N-Ch Enhancement Mode MOSFET

文件：375.42 Kbytes 页数：8 Pages

KODENSHI

可天士

丝印：3100L10；Package：TESOP-8M；Dual N-Ch Enhancement Mode MOSFET

文件：398.49 Kbytes 页数：8 Pages

KODENSHI

可天士

丝印：3100L10；Package：TESOP-8M；N-Ch Enhancement Mode MOSFET

文件：398.2 Kbytes 页数：8 Pages

KODENSHI

可天士

12 Gbps PCIe Gen3 SAS/SATA RAID Adapters

Highlights • maxCache 4.0 caching software • RAID levels: 0, 1, 5, 6, 10, 50, 60, 1 ADM and 10 ADM • Supports simultaneous use of RAID and raw devices (mixed mode) • Fifth-generation Zero-Maintenance Cache Protection (ZMCP) • Up to 24 native SAS/SATA ports in a LP/MD2 design • 12 Gbps and 6

文件：1.31901 Mbytes 页数：2 Pages

Microchip

微芯科技