丝印：30S；Package：SOT-23；N-Channel Enhancement Mode MOSFET

Features and Benefits • Low On-Resistance • High Dense Design • Reliable and Rugged Applications: • Battery management • Portable appliances • Relay driver • High-speed line driver • Low-side load switch • Switching circuits

文件：467.44 Kbytes 页数：5 Pages

HUIXIN

慧芯电子

丝印：30S；Package：QFN-FCMOD(VCG)；TPSM656x0 High-Density, 3V to 65V Input, 1V to 24V Output, 3A, 2A, 1A, Synchronous Buck DC/DC Power Modules With Enhanced HotRod™ QFN Package

1 Features • Functional Safety-Capable – Documentation available to aid functional safety system design • Versatile synchronous buck DC/DC module – Integrated MOSFETs, inductor, capacitors, and controller – 3V to 65V wide input voltage range – 40ns low minimum on time enables 36V to 3.3V

文件：2.07277 Mbytes 页数：45 Pages

TI

德州仪器

丝印：30SQ045；Package：R-6；Schottky Diodes

FEATURES High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7s, per JESD 22-B106 TYPICAL APPLICATIO

文件：471.04 Kbytes 页数：3 Pages

RFE

RFE international

丝印：30SQ045；Package：R-6；SCHOTTKY RECTIFIER DIODE

Features ● High frequency operation ● Low forward voltage drop ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability ● Solder dip 275 °C max. 7s, per JESD 22-B106 Typical Ap

文件：245.54 Kbytes 页数：2 Pages

SY

顺烨电子

丝印：30SQ045；Package：R-6；Schottky Diodes

Features ● High frequency operation ● Low forward voltage drop ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability ● Solder dip 275 °C max. 7s, per JESD 22-B106 Typical Ap

文件：624.21 Kbytes 页数：3 Pages

SHUNYE

顺烨电子

丝印：30SQ045；Package：R-6/P-600；30.0 Ampere,45Volt PhotoVoltaic Bypass Schottky Barrier Rectifier Diode

文件：533.94 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

丝印：30S21AIL；Package：SOIC；Differential-to-LVCMOS/LVTTL Translator

文件：354.69 Kbytes 页数：12 Pages

IDT

丝印：30S21AIL；Package：SOIC；Differential-to-LVCMOS/LVTTL Translator

文件：354.69 Kbytes 页数：12 Pages

IDT

丝印：30SYW；Package：SOT23-5；Proprietary NC-Cap/PSR-IITM Control

文件：167.25 Kbytes 页数：2 Pages

SIFIRST

芯赛威

3 AMP MEDIUM POWER SILICON RECTIFIER DIODES

DESCRIPTION/FEATURES ● ECONOMICAL SERIES ● HIGH SURGE, 150 AMP MAXIMUM ● UNIVERSAL REPLACEMENT FOR MANY GLASS, EPOXY, ENCAPSULATED, AND METALLIC RECTIFIERS ● PEAK REVERSE VOLTAGE THROUGH 1000 VOLTS

文件：82.38 Kbytes 页数：2 Pages

MICROSEMI

美高森美