丝印：30N06A；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

文件：1.30625 Mbytes 页数：7 Pages

UMW

友台半导体

丝印：30N06A；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

General Description The 30N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

文件：1.45959 Mbytes 页数：7 Pages

EVVOSEMI

翊欧

25A竊?0V N-CHANNEL MOSFET

文件：130.1 Kbytes 页数：5 Pages

KIA

可易亚半导体

30 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high e

文件：154.84 Kbytes 页数：8 Pages

UTC

友顺

N-Channel 6 0-V (D-S) MOSFET

文件：896.87 Kbytes 页数：6 Pages

VBSEMI

微碧半导体