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30-06-E

HERMETICALLY SEALED CRYSTAL CAN RELAY

OENINDIA

OEN India Limited

OENINDIA

30-06-A

HERMETICALLYSEALEDCRYSTALCANRELAY

OENINDIA

OEN India Limited

OENINDIA

30-06-D

HERMETICALLYSEALEDCRYSTALCANRELAY

OENINDIA

OEN India Limited

OENINDIA

30-06-G

HERMETICALLYSEALEDCRYSTALCANRELAY

OENINDIA

OEN India Limited

OENINDIA

30-06-L

HERMETICALLYSEALEDCRYSTALCANRELAY

OENINDIA

OEN India Limited

OENINDIA

DSEC30-06

HiPerFREDTMEpitaxialDiodewithcommoncathodeandsoftrecovery

Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 Applications •Antiparalleldiodeforhighfrequencyswitchingdevices •

IXYS

IXYS Integrated Circuits Division

IXYS

DSEC30-06A

HiPerFREDEpitaxialDiodewithcommoncathodeandsoftrecovery

Features ●Internationalstandardpackage ●Planarpassivatedchips ●Veryshortrecoverytime ●Extremelylowswitchinglosses ●LowIRM-values ●Softrecoverybehaviour ●EpoxymeetsUL94V-0 Applications ●Antiparalleldiodeforhighfrequencyswitchingdevices ●

IXYS

IXYS Integrated Circuits Division

IXYS

DSEC30-06B

HiPerFREDTMEpitaxialDiodewithcommoncathodeandsoftrecovery

Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 Applications •Antiparalleldiodeforhighfrequencyswitchingdevices •

IXYS

IXYS Integrated Circuits Division

IXYS

DSEC30-06B

HighPerformanceFastRecoveryDiodeLowLossandSoftRecoveryCommonCathode

HiPerFRED LowLossandSoftRecoveryHighPerformanceFastRecoveryDiodeCommonCathode Features/Advantages: ●Planarpassivatedchips ●Verylowleakagecurrent ●Veryshortrecoverytime ●Improvedthermalbehaviour ●VerylowIrm-values ●Verysoftrecoverybehaviour ●Avalanchevol

IXYS

IXYS Integrated Circuits Division

IXYS

DSEI30-06A

FastRecoveryEpitaxialDiode(FRED)

Features ●InternationalstandardpackageJEDECTO-247AD ●Planarpassivatedchips ●Veryshortrecoverytime ●Extremelylowswitchinglosses ●LowIRM-values ●Softrecoverybehavior ●EpoxymeetsUL94V-0 ●VersionARisolatedandULregisteredE153432 Applications ●Antiparalleldio

IXYS

IXYS Integrated Circuits Division

IXYS

DSEI30-06A

UltrafastRectifier

FEATURES ·Guardingforovervoltageprotection ·Dualrectifierconstruction,positivecentertap ·Metalofsiliconrectifier,majoritycarrierconduction ·Lowforwardvoltage,highefficiency ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Uni

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

DSEP30-06A

UltrafastRectifier

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

DSEP30-06A

HiPerFREDEpitaxialDiodewithsoftrecovery

Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 •Version..RisolatedandULregisteredE153432 Applications •Antiparalleldiodeforhighfr

IXYS

IXYS Integrated Circuits Division

IXYS

DSEP30-06B

HiPerFREDEpitaxialDiodewithsoftrecovery

Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 •Version..RisolatedandULregisteredE153432 Applications •Antiparalleldiodeforhighfr

IXYS

IXYS Integrated Circuits Division

IXYS

DSEP30-06BR

HiPerFREDEpitaxialDiodewithsoftrecovery

Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 •Version..RisolatedandULregisteredE153432 Applications •Antiparalleldiodeforhighfr

IXYS

IXYS Integrated Circuits Division

IXYS

DSEP30-06BR

UltrafastRecoveryDiode

FEATURES ·Ultrafastrecoverytime ·Lowforwardvoltage,highefficiency ·100avalanchetested APPLICATIONS ·Switchingpowersupply ·Powerswitchingcircuits

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

DSEP30-06CR

HiPerDynFREDTMEpitaxialDiodewithsoftrecovery(ElectricallyIsolatedBackSurface)

Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowcathodetotabcapacitance(

IXYS

IXYS Integrated Circuits Division

IXYS

FE30-06

3AFASTEFFICIENTRECTIFIER

FRONTIER

Frontier Electronics

FRONTIER

FE30-06

3AFASTEFFICIENTRECTIFIER

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

FE30-06-LFR

3AFASTEFFICIENTRECTIFIER

FRONTIER

Frontier Electronics

FRONTIER

详细参数

  • 型号:

    30-06-E

  • 制造商:

    OENINDIA

  • 制造商全称:

    OEN India Limited

  • 功能描述:

    HERMETICALLY SEALED CRYSTAL CAN RELAY

供应商型号品牌批号封装库存备注价格
Davies
22+
NA
496
加我QQ或微信咨询更多详细信息,
询价
SANKEN
10+
TO263-5
7800
全新原装正品,现货销售
询价
06+
295
进口原装-真实库存-价实
询价
Sanken
23+
TO252
4000
专业优势供应
询价
SANKEN
08+
TO263-5
714
询价
Sanken
1822+
ZIP5
9852
只做原装正品假一赔十为客户做到零风险!!
询价
SANKEN
23+
TO263-5
2000
全新进口原装现货热卖!
询价
SANKEN
2023+
TO263-5
3645
全新原厂原装产品、公司现货销售
询价
BOURNS
2017+
DIP3
32568
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
BOURNS
23+
直插
5000
原装正品,假一罚十
询价
更多30-06-E供应商 更新时间2024-4-27 10:08:00