2STD1665-1中文资料意法半导体数据手册PDF规格书

描述 Description

The device is manufactured in NPN Planar Technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

特性 Features

■ Very low collector to emitter saturation

volatage

■ High current gain characteristic

■ Fast-switching speed

■ Through-hole IPAK (TO-251) power package

in tube (suffix”-1”)

■ Surface mounting DPAK (TO-252) power

package in tape & reel (suffix”T4”)

Applications

■ Ccfl drivers

■ Voltage regulators

■ Relay drivers

■ High efficiency low voltage switching

applications