Switching Regulator Applications

Switching Regulator Applications Features • Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) • High forward transfer admittance: |Yfs| = 0.85 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDSS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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TOSHIBA

东芝

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK4027 is suitable for converter of ECM. FEATURES • High gain −1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)

文件：130.49 Kbytes 页数：5 Pages

NEC

瑞萨

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK4027 is suitable for converter of ECM. FEATURES • High gain −1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)

文件：318.18 Kbytes 页数：7 Pages

RENESAS

瑞萨

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK4028 is suitable for converter of ECM. FEATURES • High gain −1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Ultra thin thickness p

文件：263.95 Kbytes 页数：7 Pages

RENESAS

瑞萨

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK4028 is suitable for converter of ECM. FEATURES • High gain −1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Ultra thin thickness package t = 0.3 mm TYP.

文件：130.65 Kbytes 页数：5 Pages

NEC

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.75Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：314.72 Kbytes 页数：2 Pages

ISC

无锡固电

Chopper Regulator, DC/DC Converter and Motor Drive Applications

Chopper Regulator, DC/DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON-resistance : RDS (ON)= 0.07 Ω (typ.) High forward transfer admittance : |Yfs| = 6.0 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 60 V) Enhancement mode : Vth= 0.8~2.

文件：240.85 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Switching Regulator, DC-DC Converter Applications Motor Drive Applications

Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.2 mΩ(typ.) • High forward transfer admittance: |Yfs| = 110 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 60 V) • Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, I

文件：180.23 Kbytes 页数：6 Pages

TOSHIBA

东芝