2SK3812-ZP

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3812isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=2.8mΩMAX.(VGS=10V,ID=55A) RDS(on)2=3.7mΩMAX.(VGS=4.5V,ID=55A) •Highcurrentrating

2SK3812-ZP

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=110A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

2SK3812-ZP

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3812isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=2.8mΩMAX.(VGS=10V,ID=55A) RDS(on)2=3.7mΩMAX.(VGS=4.5V,ID=55A)

2SK3812

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3812isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=2.8mΩMAX.(VGS=10V,ID=55A) RDS(on)2=3.7mΩMAX.(VGS=4.5V,ID=55A) •Highcurrentrating

2SK3812

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3812isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=2.8mΩMAX.(VGS=10V,ID=55A) RDS(on)2=3.7mΩMAX.(VGS=4.5V,ID=55A)