MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3811 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) • High Current Rating: ID(DC) = ±110 A

文件：274.22 Kbytes 页数：10 Pages

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SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3811 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance RDS(on)= 1.8 mΩMAX. (VGS= 10 V, ID= 55 A) •High Current Rating: ID(DC)= ±110 A

文件：142.74 Kbytes 页数：8 Pages

NEC

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SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3811 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance RDS(on)= 1.8 mΩMAX. (VGS= 10 V, ID= 55 A) •High Current Rating: ID(DC)= ±110 A

文件：142.74 Kbytes 页数：8 Pages

NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3811 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) • High Current Rating: ID(DC) = ±110 A

文件：274.22 Kbytes 页数：10 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 110A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

SWITCHING N-CHANNEL POWER MOS FET

文件：274.83 Kbytes 页数：10 Pages

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Nch Single Power Mosfet 40V 110A 1.8Mohm Mp-25Zp/To-263

The 2SK3811-ZP is N-channel MOS Field Effect Transistor designed for high current switching applications. • Super low on-state resistanceRDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A)\n• High Current Rating: ID(DC) = ±110 A;

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