N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK3782 is suitable for converter of ECM. FEATURES • High gain −0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Ultra thin thickness package t = 0.3 mm TYP.

文件：111.44 Kbytes 页数：5 Pages

NEC

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JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3782 is suitable for converter of ECM. FEATURES • High gain −0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Ultra thin thickness

文件：244.62 Kbytes 页数：7 Pages

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JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3783 is suitable for converter of ECM. FEATURES • High gain −0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Super small area pac

文件：273.17 Kbytes 页数：7 Pages

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N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK3783 is suitable for converter of ECM. FEATURES • High gain −0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Super small area package 1006 TYP. lead less

文件：111.57 Kbytes 页数：5 Pages

NEC

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Fuji

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文件：95.86 Kbytes 页数：4 Pages

Fuji

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N-CHANNEL SILICON POWER MOSFET

FUJI

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N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

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