2SK3367-Z数据手册Renesas中文资料规格书

描述 Description

The 2SK3367-Z is a Nch Single Power Mosfet 30V 36A 9.0Mohm Mp-3Z/To-252.

特性 Features

• Low on-resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 12.0 mΩ MAX. (VGS = 4.5 V, ID = 18 A) RDS(on)3 = 14.0 mΩ MAX. (VGS = 4.0 V, ID = 18 A)
• Low Ciss : Ciss = 2800 pF TYP.
• Built-in gate protection diode
文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档2021年4月16日2SK3367 Data Sheet (D14257EJ4V0DS00)PDF230 KB日本語数据手册2006年8月1日功率MOS FET 功率MOS FET使用时的注意事项PDF1.60 MB其他2008年2月7日功率MOS FET 应用例子PDF721 KB其他2008年2月7日可靠性手册PDF15.93 MB其他2007年9月26日Addhidden documents 项目info: For device-specific or order-specific documentation, submit a support request.developer_board设计和开发模型ECAD 模块Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.扩展 ECAD 模块 产品选择Loading products for parametric search...产品选择导出settings切换fullscreen全屏settings_backup_restore重置help小贴士器件号
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