首页 >2SK3355-Z电源IC>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) •LowCiss:Ciss=9800pFTYP. • | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFieldEffectTransistor Features ●Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4V,ID=42A) ●LowCiss:Ciss=9800pFTYP. ●Built-ingateprotectiondiode | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) •LowCiss:Ciss=9800pFTYP. • | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) •LowCiss:Ciss=9800pFTYP. • | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) •LowCiss:Ciss=9800pFTYP. • | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
2022+ |
TO263 |
57550 |
询价 | |||
NEC |
23+ |
to220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NEC |
2022 |
to220 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
NEC |
24+ |
to220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
NEC |
23+ |
TO-3P |
35890 |
询价 | |||
NEC |
08+(pbfree) |
TO-3P |
8866 |
询价 | |||
NEC |
2339+ |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | |||
NEC |
23+ |
TO-3P |
12037 |
全新原装 |
询价 | ||
18 |
1746+ |
TO220 |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
询价 | ||
NEC |
2021+ |
TO-3P |
6430 |
原装现货/欢迎来电咨询 |
询价 |
