2SK3295数据手册Renesas中文资料规格书

描述 Description

DESCRIPTION
The 2SK3295 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

FEATURES
• 4.5 V drive available
• Low on-state resistance
  RDS(on)1= 18 mΩ MAX. (VGS= 10 V, ID= 18 A)
• Low gate charge
  QG= 16 nC TYP. (ID= 35 A, VDD= 16 V, VGS= 10 V)
• Built-in gate protection diode
• Surface mount device available

特性 Features

• 4.5 V drive available
• Low on-state resistance
  RDS(on)1= 18 mΩ MAX. (VGS= 10 V, ID= 18 A)
• Low gate charge
  QG= 16 nC TYP. (ID= 35 A, VDD= 16 V, VGS= 10 V)
• Built-in gate protection diode
• Surface mount device available