SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

文件：83.95 Kbytes 页数：8 Pages

NEC

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MOS Field Effect Power Transistors

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications. FEATURES · Low On-Resistance RDS (on) 1 = 40mW Max. (VGS = 10 V, ID = 13 A) RDS (on) 2 = 60mW Max. (VGS = 4 V, ID = 13 A

文件：283.99 Kbytes 页数：10 Pages

RENESAS

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 25A@ TC=25℃ · Drain Source Voltage -VDSS=60V(Min) · Static Drain-Source On-Resistance -RDS(on) =40mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.99 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 35A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 27mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.84 Kbytes 页数：2 Pages

ISC

无锡固电

MOS FIELD EFFECT POWER TRANSISTORS

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-Resistance RDS(on)1 = 27 mW Max. (VGS = 10 V, ID = 18 A) RDS(on)2 = 40 mW Max. (VGS = 4 V, ID = 18 A)

文件：304.13 Kbytes 页数：10 Pages

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瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

文件：83.89 Kbytes 页数：8 Pages

NEC

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Avalanche ratings

文件：49.74 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Avalanche ratings

文件：195.93 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Avalanche ratings

文件：195.93 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Avalanche ratings

文件：49.55 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司