Silicon N-Channel Junction FET

For impedance conversion in low frequency For infrared sensor ■ Features ● Low gate to source leakage current, IGSS ● Small capacitance of Ciss, Coss, Crss ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

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PANASONIC

松下

Small-signal device - Small-signal FETs - Junction FETs

Panasonic

松下

SOT-23

PANASONI

上传：标准国际(香港)有限公司

SOT-23

PANASONI

上传：深圳市鸿昌盛电子科技有限公司

TO-92S

TOSHIBA/东芝

上传：深圳广友电子有限公司